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H V SC AV ER O M A I S IO P L L A N IA BL S N T E
TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ HIGH HOLDING CURRENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R o
TISP4xxxH4BJ Overvoltage Protector Series
ITU-T K.20/21 Rating ....................... 8 kV 10/700, 200 A 5/310 High Holding Current ........................................... 225 mA min. Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
SMBJ Package (Top View)
R(B) 1
2
T(A)
Device `4165 `4180 `4200 `4265 `4300 `4350
VDRM V 135 145 155 200 230 275
V(BO) V 165 180 200 265 300 350
MDXXBG
Device Symbol
T
Rated for International Surge Wave Shapes
Waveshape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s
Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21 FCC Part 68 GR-1089-CORE
ITSP A 500 300 250 200 160 100
SD4XAA
R Terminals T and R correspond to the alternative line designators of A and B
Low Differential Capacitance ................................. 67 pF max. .............................................. UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
How To Order
For Standard For Lead Free Termination Finish Termination Finish Order As Order As TISP4xxxH4BJR TISP4xxxH4BJ TISP4xxxH4BJR-S TISP4xxxH4BJ-S
Device TISP4xxxH4BJ
Package BJ (J-Bend DO-214AA/SMB)
Carrier Embossed Tape Reeled Bulk Pack
Insert xxx value corresponding to protection voltages of 165 through to 350.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Description
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating `4165 `4180 `4200 `4265 `4300 `4350 Symbol Value 135 145 155 200 230 275 500 300 250 220 200 200 200 160 100 55 60 2.1 400 -40 to +150 -65 to +150 Unit
Repetitive peak off-state voltage, (see Note 1)
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage wave shape) 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K .20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. 5.
ITSP
A
ITSM diT/dt TJ Tstg
A A/s C C
See Applications Information and Figure 10 for voltage values at lower temperatures. Initially, the TISP4xxxH4BJ must be in thermal equilibrium with TJ = 25 C. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions. See Applications Information and Figure 11 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
IDRM Parameter Repetitive peak offstate current Test Conditions VD = VDRM TA = 25 C TA = 85 C `4165 `4180 `4200 `4265 `4300 `4350 `4165 `4180 `4200 `4265 `4300 `4350 0.15 0.225 5 10 90 84 79 67 74 62 35 28 33 26 Min. Typ. Max. 5 10 165 180 200 265 300 350 174 189 210 276 311 363 0.8 3 0.8 Unit A
V(BO)
Breakover voltage
dv/dt = 750 V/ms, RSOURCE = 300
V
V(BO)
Impulse breakover voltage
dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A dv/dt = 750 V/ms, RSOURCE = 300 IT = 5 A, tW = 100 s IT = 5 A, di/dt = -/+30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = 50 V f = 100 kHz, Vd = 1 V rms, VD = 0, f = 100 kHz, Vd = 1 V rms, VD = -1 V
V
I(BO) VT IH dv/dt ID
Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current
A V A kV/s A
Coff
Off-state capacitance
f = 100 kHz, Vd = 1 V rms, VD = -2 V f = 100 kHz, Vd = 1 V rms, VD = -50 V f = 100 kHz, Vd = 1 V rms, VD = -100 V (see Note 6)
TA = 85 C `4165 thru `4200 `4265 thru `4350 `4165 thru `4200 `4265 thru `4350 `4165 thru `4200 `4265 thru `4350 `4165 thru `4200 `4265 thru `4350 `4165 thru `4200 `4265 thru `4350
80 70 71 60 65 55 30 24 28 22
pF
NOTE
6: To avoid possible voltage clipping, the `4125 is tested with VD = -98 V.
Thermal Characteristics
Parameter Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 7) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C 50 Min. Typ. Max. 113 C /W Unit
RJA
Junction to free air thermal resistance
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Parameter Measurement Information
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH
V(BO)
I(BO)
-v IDRM
VDRM
VD
ID ID VD VDRM
IDRM +v
I(BO)
IH
V(BO)
VT IT ITSM
Quadrant III Switching Characteristic ITSP -i
PMXXAAB
Figure 1. Voltage-current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE NORMALIZED BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE TC4HAF
100 VD = 50 V
TCHAG
1.10
Normalized Breakover Voltage
10 |ID| - Off-State Current - A
1.05
1
0*1
1.00
0*01
0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
Figure 3.
ON-STATE CURRENT vs ON-STATE VOLTAGE
NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE
TC4HAHA
200 150 100 70 IT - On-State Current - A 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7
2.0
TC4HAK
TA = 25 C tW = 100 s Normalized Holding Current '4265 THRU '4350 1 '4165 THRU '4200 1.5 2 3 45 V - On-State Voltage - V 7 10
1.5
1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 4.
Figure 5.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
1 0.9 Capacitance Normalized to V D = 0 0.8 0.7 0.6
TC4HAIA
36 TJ = 25 C Vd = 1 Vrms C - Differential Off-State Capacitance - pF '4165 '4180 '4200 '4265 '4300
TCHAJA
35
'4165 THRU '4200 0.5 '4265 THRU '4350 0.4
34
33
C = Coff(-2 V) - Coff(-50 V)
32
0.3
31
0.2 0.5
1
2
3 5 10 20 30 50 VD - Off-state Voltage - V
100150
30 130
150 170 200 230 270 VDRM - Repetitive Peak Off-State Voltage - V
'4350 300
Figure 6.
Figure 7.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI4HAC THERMAL IMPEDANCE vs POWER DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A
30 20 15 10 9 8 7 6 5 4 3 2 1.5 0*1
150 ZJA(t) - Transient Thermal Impedance - C /W 100 70 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0*1 1
TI4HAE
VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C
ITSM(t) APPLIED FOR TIME t EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C 10 t - Power Duration - s 100 1000
1
10
100
1000
t - Current Duration - s
Figure 8.
Figure 9.
1.00 0.99 0.98 Derating Factor 0.97
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
TI4HAFA
700 600 500 400 Impulse Current - A 300 250 200 150 120
IMPULSE RATING vs AMBIENT TEMPERATURE
TC4HAA
BELLCORE 2/10
IEC 1.2/50, 8/20
FCC 10/160 ITU-T 10/700 FCC 10/560
'4165 THRU '4200 0.96 0.95 0.94 '4265 THRU '4350 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
BELLCORE 10/1000 100 90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80
TAMIN - Minimum Ambient Temperature - C
TA - Ambient Temperature - C
Figure 10.
Figure 11.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13).
Th3 Th1 Th1 Th2
Figure 12. Two Point Protection
Figure 13. Multi-point Protection
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to V(BO). This configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not required.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values.
Standard
Peak Voltage Setting V
Voltage Waveform s 2/10 10/1000 10/160 10/560 9/720 9/720 0.5/700
Peak Current Value A
Current Waveform s
TISP4xxxH4 25 C Rating A
Series Resistance
2500 500 2/10 500 0 1000 100 10/1000 100 1500 200 10/160 250 0 800 100 10/560 160 0 FCC Part 68 (March 1998) 1500 37.5 5/320 200 0 1000 25 5/320 200 0 I3124 1500 37.5 0.2/310 200 0 37.5 1500 5/310 200 0 10/700 ITU-T K.20/K.21 100 4000 FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator GR-1089-CORE
If the impulse generator current exceeds the protector's current rating, then a series resistance can be used to reduce the current to the protector's rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generator's peak voltage by the protector's rated current. The impulse generator's fictive impedance (generator's peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible, values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP4265H4BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing 100 V r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 C value. Figure 10 shows that this condition will occur at an ambient temperature of -22 C. In this example, the TISP4265H4BJ will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -22 C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Typical Circuits
MODEM RING FUSE RING DETECTOR HOOK SWITCH TISP4350H4 D.C. SINK SIGNAL TIP AI6XBPA RING WIRE Th1 Th2 R1b E.G. LINE CARD TIP WIRE
R1a Th3 PROTECTED EQUIPMENT
AI6XBK
Figure 14. Modem Inter-wire Protection
Figure 15. Protection Module
R1a Th3 Th1 Th2 R1b SIGNAL
AI6XBL
D.C.
Figure 16. ISDN Protection
OVERCURRENT PROTECTION TIP WIRE R1a
RING/TEST PROTECTION
TEST RELAY
RING RELAY
SLIC RELAY S3a
SLIC PROTECTION
Th4
Th3 Th1 Th2 RING WIRE R1b
S1a
S2a SLIC
Th5 S3b S1b S2b
TISP6xxxx, TISPPBLx, 1/2TISP6NTP2 C1 220 nF VBAT
TEST EQUIPMENT
RING GENERATOR
AI6XBJ
Figure 17. Line NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Card Ring/Test Protection
TISP4xxxH4BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Footprint
SMB Pad Size
2.54 (.100)
2.40 (.094)
2.16 (.085)
DIMENSIONS ARE:
METRIC (INCHES)
MDXXBI
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device TISP4165H4BJ TISP4180H4BJ TISP4200H4BJ TISP4265H4BJ TISP4300H4BJ TISP4350H4BJ
Symbolization Code 4165H4 4180H4 4200H4 4265H4 4300H4 4350H4
Carrier Information
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
For Standard Termination Finish Carrier Order As Embossed Tape Reel Pack TISP4xxxH4BJR Bulk Pack TISP4xxxH4BJ
For Lead Free Termination Finish Order As TISP4xxxH4BJR-S TISP4xxxH4BJ-S
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protection Series
MECHANICAL DATA
SMBJ (DO-214AA)
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB
4.06 - 4.57 (.160 - .180)
3.30 - 3.94 (.130 - .155)
2
Index Mark (if needed)
DIMENSIONS ARE:
METRIC (INCHES)
2.00 - 2.40 (.079 - .094)
0.76 - 1.52 (.030 - .060)
1.90 - 2.10 (.075 - .083)
0.10 - 0.20 (.004 - .008)
1.96 - 2.32 (.077 - .091)
5.21 - 5.59 (.205 - .220)
MDXXBHA
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
MECHANICAL DATA
Tape Dimensions
SMB Package Single-Sprocket Tape
3.90 - 4.10 (.154 - .161)
1.55 - 1.65 (.061 - .065)
1.95 - 2.05 (.077 - .081)
1.65 - 1.85 (.065 - .073)
0.40 MAX. (.016)
5.54 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484) 8.20 MAX. (.323)
7.90 - 8.10 (.311 - .319)
O 1.50 MIN. (.059)
0 MIN.
Cover Tape
4.50 MAX. (.177)
Carrier Tape Direction of Feed Embossment 20
Maximium component rotation
Index Mark
DIMENSIONS ARE: METRIC (INCHES)
Typical component cavity center line Typical component center line
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in.) MIN. to 0.65 mm (.026 in.) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 3.0 mm (12.99 .118 in.) Reel hub diameter 75 mm (2.95 in.) MIN. Reel axial hole: 13.0 0.5 mm (.512 .020 in.) C. 3000 devices are on a reel.
MDXXBJ
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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